LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas
Identifieur interne : 001109 ( Russie/Analysis ); précédent : 001108; suivant : 001110LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas
Auteurs : RBID : Pascal:98-0057815Descripteurs français
- Pascal (Inist)
- 0707D, Etude expérimentale, Capteur chimique, Détecteur de gaz, Méthane, Fabrication, Diode électroluminescente, Rayonnement IR, Epitaxie phase liquide, Hétérostructure, Matériau semiconducteur, Composé binaire, Indium phosphure, Composé quaternaire, Indium arséniure, Gallium arséniure, Gallium phosphure, InP, In P, InGaAsP, As Ga In P.
English descriptors
- KwdEn :
Abstract
Copyright (c) 1997 Elsevier Science S.A. All rights reserved. Highly effective IR light-emitting diodes operating at the wavelength 1.66 μm and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM), electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CH4 gas sensor has been developed and fabricated on the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested. It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2×1 km.© 1997 Elsevier Science S.A.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas</title><author><name sortKey="Volkov, V V" uniqKey="Volkov V">V. V. Volkov</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1> University of Antwerp (RUCA), EMAT, Groenenborgerlaan 171, B-2020</s1><s2>Antwerp</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Antwerp</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1> N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prosp. 31, 117907</s1><s2>Moscow, GSP-1</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Moscow, GSP-1</wicri:noRegion></affiliation></author><author><name sortKey="Van Landuyt, J" uniqKey="Van Landuyt J">J. Van Landuyt</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1> University of Antwerp (RUCA), EMAT, Groenenborgerlaan 171, B-2020</s1><s2>Antwerp</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Antwerp</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation></author><author><name sortKey="Marushkin, K" uniqKey="Marushkin K">K. Marushkin</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1> University of Antwerp, MiTAC, Universiteitsplein 1, B-2610 Wilrijk</s1><s2>Antwerp</s2><s3>BEL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Antwerp</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1> N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prosp. 31, 117907</s1><s2>Moscow, GSP-1</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Moscow, GSP-1</wicri:noRegion></affiliation></author><author><name sortKey="Gijbels, R" uniqKey="Gijbels R">R. Gijbels</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1> University of Antwerp, MiTAC, Universiteitsplein 1, B-2610 Wilrijk</s1><s2>Antwerp</s2><s3>BEL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Antwerp</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation></author><author><name sortKey="Ferauge, C" uniqKey="Ferauge C">C. Ferauge</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1> University of Antwerp, MiTAC, Universiteitsplein 1, B-2610 Wilrijk</s1><s2>Antwerp</s2><s3>BEL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Antwerp</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation></author><author><name sortKey="Vasilyev, M G" uniqKey="Vasilyev M">M. G. Vasilyev</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1> N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prosp. 31, 117907</s1><s2>Moscow, GSP-1</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Moscow, GSP-1</wicri:noRegion></affiliation></author><author><name sortKey="Shelyakin, A A" uniqKey="Shelyakin A">A. A. Shelyakin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1> N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prosp. 31, 117907</s1><s2>Moscow, GSP-1</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Moscow, GSP-1</wicri:noRegion></affiliation></author><author><name sortKey="Sokolovsky, A A" uniqKey="Sokolovsky A">A. A. Sokolovsky</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1> Institute of Radioelectronics, Vvedenskogo sq. 1</s1><s2>Phryasino, Moscow Region</s2><s3>RUS</s3><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Phryasino, Moscow Region</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0057815</idno><date when="1997">1997</date><idno type="stanalyst">PASCAL 98-0057815 Elsevier</idno><idno type="RBID">Pascal:98-0057815</idno><idno type="wicri:Area/Main/Corpus">017C11</idno><idno type="wicri:Area/Main/Repository">018B68</idno><idno type="wicri:Area/Russie/Extraction">001109</idno></publicationStmt><seriesStmt><idno type="ISSN">0924-4247</idno><title level="j" type="abbreviated">Sens. actuators, A Phys.</title><title level="j" type="main">Sensors and actuators. A, Physical</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Chemical sensors</term><term>Experimental study</term><term>Fabrication</term><term>Gallium arsenides</term><term>Gallium phosphides</term><term>Gas detector</term><term>Heterostructures</term><term>Indium arsenides</term><term>Indium phosphides</term><term>Infrared radiation</term><term>LPE</term><term>Light emitting diodes</term><term>Methane</term><term>Quaternary compounds</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>0707D</term><term>Etude expérimentale</term><term>Capteur chimique</term><term>Détecteur de gaz</term><term>Méthane</term><term>Fabrication</term><term>Diode électroluminescente</term><term>Rayonnement IR</term><term>Epitaxie phase liquide</term><term>Hétérostructure</term><term>Matériau semiconducteur</term><term>Composé binaire</term><term>Indium phosphure</term><term>Composé quaternaire</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Gallium phosphure</term><term>InP</term><term>In P</term><term>InGaAsP</term><term>As Ga In P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Copyright (c) 1997 Elsevier Science S.A. All rights reserved. Highly effective IR light-emitting diodes operating at the wavelength 1.66 μm and based on the buried heterostructure In<sub>0.88</sub>Ga<sub>0.12</sub>As<sub>0.26</sub>P<sub>0.74</sub>/In<sub>0.72</sub>Ga<sub>0.28</sub>As<sub>0.62</sub>P<sub>0.38</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM), electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CH<sub>4</sub> gas sensor has been developed and fabricated on the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH<sub>4</sub> gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested. It is shown that the proposed type of sensor can be used for the quantitative remote control of CH<sub>4</sub> gas concentration (0.2-100%) via a fibre glass line up to a distance of 2×1 km.© 1997 Elsevier Science S.A.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0924-4247</s0></fA01><fA03 i2="1"><s0>Sens. actuators, A Phys.</s0></fA03><fA05><s2>62</s2></fA05><fA06><s2>1-3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas</s1></fA08><fA11 i1="01" i2="1"><s1>VOLKOV (V. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>VAN LANDUYT (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>MARUSHKIN (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>GIJBELS (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>FERAUGE (C.)</s1></fA11><fA11 i1="06" i2="1"><s1>VASILYEV (M. G.)</s1></fA11><fA11 i1="07" i2="1"><s1>SHELYAKIN (A. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>SOKOLOVSKY (A. A.)</s1></fA11><fA14 i1="01"><s1> University of Antwerp (RUCA), EMAT, Groenenborgerlaan 171, B-2020</s1><s2>Antwerp</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1> University of Antwerp, MiTAC, Universiteitsplein 1, B-2610 Wilrijk</s1><s2>Antwerp</s2><s3>BEL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1> N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prosp. 31, 117907</s1><s2>Moscow, GSP-1</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="04"><s1> Institute of Radioelectronics, Vvedenskogo sq. 1</s1><s2>Phryasino, Moscow Region</s2><s3>RUS</s3><sZ>8 aut.</sZ></fA14><fA20><s1>624-632</s1></fA20><fA21><s1>1997</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA24 i1="01"><s0>eng</s0></fA24><fA43 i1="01"><s1>INIST</s1><s2>19425A</s2><s5>354000069901060058</s5></fA43><fA44><s0>9000</s0><s1>© 1998 Elsevier Science B.V. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0057815</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Sensors and actuators. A, Physical</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Copyright (c) 1997 Elsevier Science S.A. All rights reserved. Highly effective IR light-emitting diodes operating at the wavelength 1.66 μm and based on the buried heterostructure In<sub>0.88</sub>Ga<sub>0.12</sub>As<sub>0.26</sub>P<sub>0.74</sub>/In<sub>0.72</sub>Ga<sub>0.28</sub>As<sub>0.62</sub>P<sub>0.38</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM), electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CH<sub>4</sub> gas sensor has been developed and fabricated on the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH<sub>4</sub> gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested. It is shown that the proposed type of sensor can be used for the quantitative remote control of CH<sub>4</sub> gas concentration (0.2-100%) via a fibre glass line up to a distance of 2×1 km.© 1997 Elsevier Science S.A.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00G07D</s0></fC02><fC02 i1="02" i2="X"><s0>001C04A</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>0707D</s0><s2>PAC</s2><s4>INC</s4><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>45</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Experimental study</s0><s5>45</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Capteur chimique</s0><s5>46</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Chemical sensors</s0><s5>46</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Détecteur de gaz</s0><s5>47</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Gas detector</s0><s5>47</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Detector de gas</s0><s5>47</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Méthane</s0><s2>NK</s2><s5>48</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Methane</s0><s2>NK</s2><s5>48</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Fabrication</s0><s5>49</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Fabrication</s0><s5>49</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diode électroluminescente</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Light emitting diodes</s0><s5>50</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Rayonnement IR</s0><s5>51</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Infrared radiation</s0><s5>51</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0><s5>52</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>LPE</s0><s5>52</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>53</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Heterostructures</s0><s5>53</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Matériau semiconducteur</s0><s5>54</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>54</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé binaire</s0><s5>55</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Binary compounds</s0><s5>55</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>56</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>56</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Composé quaternaire</s0><s5>57</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Quaternary compounds</s0><s5>57</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>58</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>58</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>59</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>59</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2><s5>60</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2><s5>60</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InGaAsP</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>As Ga In P</s0><s4>INC</s4><s5>87</s5></fC03><fN21><s1>033</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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